• DocumentCode
    963147
  • Title

    Infra-red AlGaAs and visible AlGaInP laser-diode stack

  • Author

    Bour, D.P. ; Treat, D.W. ; Beernink, K.J. ; Thornton, R.L.

  • Author_Institution
    Xerox Palo Alto Res. Center, CA, USA
  • Volume
    29
  • Issue
    21
  • fYear
    1993
  • Firstpage
    1855
  • Lastpage
    1856
  • Abstract
    A monolithic combination of an AlGaAs laser and an AlGaInP laser is demonstrated. The two laser are grown in a stack, in a single metal organic vapour phase epitaxial growth. The two devices can be addressed individually, and exhibit good characteristics: for the AlGaAs laser, the pulsed threshold current density and efficiency are 240 A/cm2 and 26%/facet, while the respective values for the red AlGaInP laser are 260 A/cm2 and 21%/facet.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 21 percent; 26 percent; efficiency; laser-diode stack; monolithic combination; pulsed threshold current density; single metal organic vapour phase epitaxial growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931235
  • Filename
    241381
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963147