Title :
Tensile-strained AlGaInP single-quantum-well LDs emitting at 615 nm
Author :
Tanaka, T. ; Yanagisawa, H. ; Takimoto, Munehiro ; Minagawa, S.
Author_Institution :
Central Res Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
CW oscillation at a wavelength shorter than 630 nm, which depends on the Al content incorporated into a tensile-strained single-quantum-well active region of AlGaInP LDs, is investigated. A threshold current of 112 mA at 20 degrees C is attained in a quaternary (AlxGa1-x)InP (x=0.1) SQW LD emitting at 615 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; semiconductor lasers; semiconductor quantum wells; 112 mA; 20 degC; 615 nm; Al 0.1Ga 0.9InP; AlGaInP; CW oscillation; SQW LD; laser diodes; tensile-strained single-quantum-well active region; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931241
