• DocumentCode
    963203
  • Title

    Tensile-strained AlGaInP single-quantum-well LDs emitting at 615 nm

  • Author

    Tanaka, T. ; Yanagisawa, H. ; Takimoto, Munehiro ; Minagawa, S.

  • Author_Institution
    Central Res Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    29
  • Issue
    21
  • fYear
    1993
  • Firstpage
    1864
  • Lastpage
    1866
  • Abstract
    CW oscillation at a wavelength shorter than 630 nm, which depends on the Al content incorporated into a tensile-strained single-quantum-well active region of AlGaInP LDs, is investigated. A threshold current of 112 mA at 20 degrees C is attained in a quaternary (AlxGa1-x)InP (x=0.1) SQW LD emitting at 615 nm.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; semiconductor lasers; semiconductor quantum wells; 112 mA; 20 degC; 615 nm; Al 0.1Ga 0.9InP; AlGaInP; CW oscillation; SQW LD; laser diodes; tensile-strained single-quantum-well active region; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931241
  • Filename
    241387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963203