AlGaN/GaN HFETs fabricated from maskless selectively grown mesas on Si(111) substrates

Author

Bardwell, J.A. ; Haffouz, S. ; Kochtane, A. ; Lester, T. ; Storey, C. ; Tang, H.

Author_Institution

Nat. Res. Council Canada, Ottawa

Volume

43

Issue

22

fYear

2007

Abstract

AlGaN/GaN heterostructure field effect transistors (HFETs) fabricated from maskless selectively grown mesas by ammonia molecular beam epitaxy on Si(111) substrates are demonstrated. With 0.8 mum gate length, the devices exhibited maximum drain current and trans- conductance of 425 niA/mm and 140 mS/mm, respectively. Values of f_T and f_MAX of 8 and 19 GHz, respectively, were obtained from RF measurements. A 50 nm-thick SiN_x passivation layer was found to be very effective in mitigating the current collapse.

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; molecular beam epitaxial growth; silicon; substrates; wide band gap semiconductors; AlGaN-GaN-Si; HFET; RF measurements; Si; Si(111) substrates; SiN_x passivation layer; ammonia molecular beam epitaxy; current collapse; frequency 19 GHz; frequency 8 GHz; heterostructure field effect transistors; maskless selectively grown mesas; maximum drain current; silicon substrates; transconductance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20072039

Filename

4375470