Title :
Electron saturation velocity in Ga0.5In0.5P measured in a GaInP/GaAs/GaInP double-heterojunction bipolar transistor
Author :
Liu, Wenxin ; Henderson, Tim ; Beam, E.
Author_Institution :
Central Res. Lab., Texas Instrum., Dallas, TX, USA
Abstract :
The first (not necessarily typical) performance measurements on Ga0.5In0.5P/GaAs/Ga0.5In0.5P double-heterojunction bipolar transistors are reported. The measured cutoff frequency and maximum oscillation frequency are 25 and 35 GHz, respectively. From various measurements of fT under various bias conditions, the value of the electron saturation velocity in GaInP is determined to be 4.4*106 cm/s.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 25 GHz; 35 GHz; DHBT; Ga 0.5In 0.5P-GaAs-Ga 0.5In 0.5P; cutoff frequency; double-heterojunction bipolar transistor; electron saturation velocity; maximum oscillation frequency; performance measurements;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931255
