Title :
High-speed InP/InGaAs HBTs operated at submilliampere collector currents
Author :
Nakajima, Hiromasa ; Kurishima, Kenji ; Yamahata, S. ; Kobayashi, Takehiko ; Matsuoka, Yasutaka
Author_Institution :
LSI Lab., NTT, Kanagawa, Japan
Abstract :
Extremely small-emitter InP/InGaAs heterojunction bipolar transistors have been fabricated by using a selfalignment technique on MOCVD-grown material. Fabricated devices with a 1*2 mu m2 emitter electrode showed fT exceeding 100 GHz at submilliampere collector currents of IC>0.6 mA. A maximum fT of 163 GHz at IC=2.3 mA ranks with the fT=176 GHz achieved by a simultaneously fabricated 2*20 mu m2 transistor at IC=45 mA.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; vapour phase epitaxial growth; 0.6 to 2.3 mA; 1 micron; 100 to 163 GHz; 2 micron; InP-InGaAs; MOCVD-grown material; heterojunction bipolar transistors; selfalignment technique; small emitter size; submilliampere collector currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931256
