DocumentCode :
963403
Title :
Impact ionisation in high-output-conductance region of 0.5 mu m AlSb/InAs HEMTs
Author :
Boos, J. Brad ; Shanabrook, B.V. ; Park, DaeLim ; Davis, J. Lynn ; Dietrich, H.B. ; Kruppa, W.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
29
Issue :
21
fYear :
1993
Firstpage :
1888
Lastpage :
1890
Abstract :
DC and RF measurements on AlSb/InAs HEMTs biased in the commonly observed high output conductance region are reported. In this region, high gate current, inductive output impedance and increased noise were observed resulting from impact ionisation. Devices with a 0.5 mu m gate length exhibited a maximum fT and fmax of 25 and 40 GHz, respectively.
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device noise; solid-state microwave devices; 0.5 micron; 25 GHz; 40 GHz; AlSb-InAs; DC measurements; HEMTs; RF measurements; high gate current; high-output-conductance region; impact ionisation; inductive output impedance; noise;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19931257
Filename :
241403
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=963403
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