DocumentCode
963412
Title
Improved thermal performance of AlGaAs/GaAs HBTs by transferring the epitaxial layers to high-thermal-conductivity substrates
Author
Sullivan, G.J. ; Hardwick, D.A. ; Higgins, J.A. ; Chang, M.F.
Author_Institution
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Volume
29
Issue
21
fYear
1993
Firstpage
1890
Lastpage
1891
Abstract
The authors report the improved thermal performance of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) by removal of the GaAs substrate and transferring the epitaxial layers to optimal substrates (TELOS). The thermal resistance of HBTs has been halved by transfer to diamond substrates. 3 inch-diameter (76.2 mm) epitaxial layers have been transferred, retaining a surface flatness suitable for high resolution photolithography.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor technology; substrates; thermal resistance; AlGaAs-GaAs; AlN substrate; C substrate; TELOS; diamond substrates; epitaxial layers; heterojunction bipolar transistors; high-thermal-conductivity substrates; optimal substrates; thermal performance; thermal resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931258
Filename
241404
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