Title :
New structural approach for reducing punchthrough current in deep submicrometre MOSFETs and extending MOSFET scaling
Author :
Hareland, Scott A. ; Tasch, A.F. ; Maziar, C.M.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
A heterojunction MOSFET structure is proposed in which the energy band offset of a heterojunction provides an additional potential energy barrier at the source in order to improve the turn-off characteristics in extremely small MOSFETs. Initial numerical simulations of this device show that the heterojunction MOSFET yields a substantial improvement in off-state leakage current compared to a conventional all-Si (homojunction) MOSFET. An additional design technique such as this is believed to be able to allow devices to be scaled more effectively to \n\n\t\t
Keywords :
insulated gate field effect transistors; leakage currents; tunnelling; 0.1 micron; GeSi-Si; MOSFET scaling; deep submicrometre; deep submicron devices; energy band offset; heterojunction MOSFET structure; leakage current; potential energy barrier; punchthrough current; turn-off characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931261
