Title :
Saturation region model for a-Si-H TFTs using a quasi-two-dimensional approach
Author :
Kuo, J.B. ; Chen, S.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A saturation region model for a-Si:H thin film transistors using a quasi-two-dimensional approach is reported. As verified by the published data, this analytical saturation region model provides an accurate prediction of the drain current characteristics of an a-Si:H TFT.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor device models; silicon; thin film transistors; TFT; amorphous Si:H; quasi-two-dimensional approach; saturation region model; thin film transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931262
