Title :
Approximate formula for surface carrier concentration in charge-coupled devices
Author :
Ong, D.G. ; Pierret, R.F.
Author_Institution :
Purdue University, School of Electrical Engineering, West Lafayette, USA
Abstract :
A closed-form approximate formula is developed that conveniently relates the surface volume concentration of the signal charge in a c.c.d. element to externally specified system variables. The approximation error is exhibited to be less than 1% for a typical set of device parameters.
Keywords :
carrier density; charge-coupled devices; surface electron states; carrier density; charge coupled devices; field effect devices; surface electron states;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740004
