• DocumentCode
    963488
  • Title

    Approximate formula for surface carrier concentration in charge-coupled devices

  • Author

    Ong, D.G. ; Pierret, R.F.

  • Author_Institution
    Purdue University, School of Electrical Engineering, West Lafayette, USA
  • Volume
    10
  • Issue
    1
  • fYear
    1974
  • Firstpage
    6
  • Lastpage
    7
  • Abstract
    A closed-form approximate formula is developed that conveniently relates the surface volume concentration of the signal charge in a c.c.d. element to externally specified system variables. The approximation error is exhibited to be less than 1% for a typical set of device parameters.
  • Keywords
    carrier density; charge-coupled devices; surface electron states; carrier density; charge coupled devices; field effect devices; surface electron states;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740004
  • Filename
    4244954
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963488