• DocumentCode
    963745
  • Title

    Comparison of noise parameters of diffused and ion-implanted microwave transistors

  • Author

    Ludvik, S. ; Froess, P.

  • Author_Institution
    Hewlett-Packard, Palo Alto, USA
  • Volume
    10
  • Issue
    4
  • fYear
    1974
  • Firstpage
    40
  • Lastpage
    41
  • Abstract
    Two types of implanted microwave transistor structures are outlined, and their behaviour is compared with a totally diffused device. Minimum noise figures for the implanted transistors have been obtained in the range 3.6¿4.5 dB at a frequency of 4 GHz.
  • Keywords
    bipolar transistors; ion implantation; noise; solid-state microwave devices; 4 GHz; bipolar transistors; ion implantation; noise; solid state microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740030
  • Filename
    4244983
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963745