Performance of vertically coupled backside fiber-optic interconnections to GaAs

Author

Fossum, Eric R. ; Tischler, M.A.

Volume

36

Issue

11

fYear

1989

fDate

11/1/1989 12:00:00 AM

Firstpage

2629

Abstract

Summary form only given. A vertical coupling technique suited for dense fiber-optic interconnection of two-dimensional device arrays in GaAs has recently been developed. It uses cavities etched in the backside of the wafer to align each fiber to a diaphragm photodetector (DPD) fabricated on the front-surface epitaxial layers. Operation of the fiber-pigtailed DPDs is described. Enhanced optoelectronic performance due to the backside approach as well as the capability of addressing interconnect arrays with approximately 10 fibers/mm² is reported.

Keywords

III-V semiconductors; fibre optics; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical interconnections; backside illumination; capability of addressing interconnect arrays; dense fiber-optic interconnection; diaphragm photodetector; epitaxial layers; fiber-pigtailed DPDs; optoelectronic performance; two-dimensional device arrays; vertical coupling technique; vertically coupled backside fiber-optic interconnections; Epitaxial layers; Etching; FETs; Gallium arsenide; Lighting; MOSFETs; Optical coupling; Optical fiber devices; Optical interconnections; Optical reflection; Photoconductivity; Photodetectors; Schottky diodes; Shadow mapping;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43761

Filename

43761