Title :
New anatomies for semiconductor wafers
Author_Institution :
Kopin Corp., Taunton, MA, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
The mixing and matching of semiconductor materials to produce specific performance characteristics is discussed. Instances are GaAs-on-Si and Si-on-insulator wafers, and wafers that layer various III-V and II-VI materials. The techniques, collectively named wafer engineering make it possible to grow ultrathin freestanding wafers. The discussion focuses on GaAs-on-Si and Si-on-insulator, which have the most immediate commercial potential. Cleft layers, obtained by a technique called lateral overgrowth, and other advanced approaches to engineering materials with specified properties, are examined.<>
Keywords :
semiconductor growth; semiconductor technology; GaAs-Si; II-VI; III-V; lateral overgrowth; semiconductor materials; semiconductor wafers; wafer engineering; Anatomy; Atomic layer deposition; Crystalline materials; Crystallization; Gallium arsenide; Lattices; Optical materials; Semiconductor materials; Silicon; Substrates;
Journal_Title :
Spectrum, IEEE
