Title :
Gunn effects in InxGa1¿xSb (0 ¿ x ¿ 0.16)
Author :
Hojo, A. ; Kuru, I.
Author_Institution :
Toshiba Corporation, Electron Device Laboratory, Toshiba Research and Development Center, Kawasaki, Japan
Abstract :
Gunn effects in InxGa1¿xSb (0 ¿ x ¿ 0.16) have been observed. To observe the Gunn effect, a condition nL/n¿ ¿ 0.1 or, equivalently, ¿EL¿ ¿ 6.4kT should be satisfied in the crystals. The threshold fields for the Gunn effect in the crystals were in the range of 0.6¿1.0 kV/cm.
Keywords :
Gunn effect; III-V semiconductors; band structure; indium antimonide; negative resistance; Gunn effects; III-V semiconductors; InxGa1-xSb; band structure; indium antimonide; negative resistance; threshold fields;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740047
