Title :
Generation/recombination of carriers in p-n junctions
Author :
Morgan, D.V. ; Ashburn, P.
Author_Institution :
University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
Abstract :
In the letter, we present theoretical I/V characteristics of silicon diodes. Generation/recombination is included, and the variation of the I/V characteristics with trap density Ntt is noted. The differences between uniform and nonuniform distributions of recombination centres are discussed, and a comparison is made with previously published experimental results.
Keywords :
electron-hole recombination; p-n homojunctions; semiconductor diodes; I/V characteristics; electron hole recombinations; p-n homojunctions; p-n junctions; semiconductor diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740066
