• DocumentCode
    964192
  • Title

    High-efficiency proton-isolated GaAs IMPATT diodes

  • Author

    Speight, J.D. ; Leigh, P. ; McIntyre, N. ; Groves, I.G. ; O´Hara, S. ; Hemment, P.

  • Author_Institution
    Post Office, Research Station, London, UK
  • Volume
    10
  • Issue
    7
  • fYear
    1974
  • Firstpage
    98
  • Lastpage
    99
  • Abstract
    The fabrication and c.w. operation of planar proton-isolated diffused junction and Schottky-barrier GaAs IMPATT diodes are described. The diodes have shown a maximum efficiency of 13.5% and output power of 315 mW in the Q band. Planar diodes appear to be superior to mesa devices formed from identical material.
  • Keywords
    III-V semiconductors; IMPATT diodes; Schottky-barrier diodes; gallium arsenide; semiconductor device manufacture; solid-state microwave devices; 315 milliwatt; IMPATT diodes; Q-band; Schottky barrier diodes; fabrication; gallium arsenide; proton isolated diffused junction; semiconductor device manufacture; solid state microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740076
  • Filename
    4245032
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=964192