Title :
Electron dynamics in short-channel InP field-effect transistors
Author :
Maloney, Timothy J. ; Frey, Jesse
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
The transient response of electrons to a high field in InP has been calculated by a Monte Carlo method. The results are compared with previously published results for GaAs, and used to indicate the performance that may be obtained in InP and GaAs microwave f.e.t.s.
Keywords :
III-V semiconductors; Monte Carlo methods; carrier mobility; field effect transistors; high-frequency effects; indium compounds; solid-state microwave devices; transient response; GaAs; Monte Carlo method; carrier mobility; field effect transistors; high field effects; indium compounds; solid state microwave devices; transient response;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740089
