Title :
High-efficiency uni-travelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz
Author :
Beck, Andre ; Ducournau, Guillaume ; Zaknoune, Mohammed ; Peytavit, Emilien ; Akalin, T. ; Lampin, J.F. ; Mollot, F. ; Hindle, F. ; Yang, Chao ; Mouret, G.
Author_Institution :
CNRS, Univ. des Sci. et Technol. de Lille, Lille
Abstract :
The fabrication of InGaAs/InP uni-travelling-carrier photodiodes integrated with broadband horn antennas and demonstration of photomixing up to 1.8 THz are reported. A radiated power of 1.1 W at 940 GHz was measured for a photocurrent of only 2.75 mA (50 mW optical power), demonstrating the high efficiency of the device. The conversion efficiency obtained has been increased by more than a decade compared to the best reported values in the literature. The photomixer is used to identify the 1411 GHz water vapour absorption line at atmospheric pressure.
Keywords :
III-V semiconductors; gallium arsenide; horn antennas; indium compounds; integrated optoelectronics; mixers (circuits); photoconductivity; photodiodes; InGaAs-InP; atmospheric pressure; broadband horn antennas; conversion efficiency; current 2.75 mA; frequency 1.8 THz; frequency 1411 GHz; frequency 940 GHz; high-efficiency uni-travelling-carrier photomixer; photocurrent; power 1.1 muW; power 50 mW; uni-travelling-carrier photodiodes; water vapour absorption line;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082219
