Title :
Effect of carrier diffusion on operation of avalanche diodes
Author_Institution :
University College London, Department of Electronic & Electrical Engineering, London, UK
Abstract :
The effect of carrier diffusion on the performance of avalanche diodes has received little attention in the literature. This letter presents a simple analytical model of the effects of diffusion on device performance, and arrives at an upper frequency limit dictated by the diffusion effect. The model can be used to give a derating factor onto analyses that neglect this parameter. An example of the application of this is given, and the results compared with previously published computer simulations.
Keywords :
avalanche diodes; semiconductor device models; avalanche diodes; carrier diffusion effect; semiconductor device model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740110
