• DocumentCode
    964547
  • Title

    Sub-terahertz testing of silicon MOSFET

  • Author

    Stillman, W. ; Veksler, Dekel ; Elkhatib, T.A. ; Salama, Khaled ; Guarin, Fernando ; Shur, Michael S.

  • Author_Institution
    Dept. of ECSE, Rensselaer Polytech. Inst., Troy, NY
  • Volume
    44
  • Issue
    22
  • fYear
    2008
  • Firstpage
    1325
  • Lastpage
    1326
  • Abstract
    The difference in the terahertz response of Si MOSFETs with identical above threshold characteristics but different values of the leakage current in the below threshold regime is demonstrated. The results show that the terahertz response test can be used as a complementary testing technique of a Si MOS VLSI under bias.
  • Keywords
    MOSFET; elemental semiconductors; leakage currents; silicon; submillimetre waves; Si; leakage current; silicon MOSFET; subterahertz testing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20089418
  • Filename
    4658768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=964547