Title :
Threshold-voltage sensitivity of ion-implanted m.o.s. transistors due to process variations
Author :
Schemmert, W. ; Zimmer, G.
Author_Institution :
Universitÿt Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Dortmund, West Germany
Abstract :
Adjustment of the threshold voltage VT by ion implantation yields a certain distribution of threshold voltages determined by different process parameters. A procedure is presented for minimising the threshold-voltage sensitivity of implanted m.o.s. transistors due to these parameters for a typical set of process parameters.
Keywords :
field effect transistors; ion implantation; sensitivity; FET; MOS; ion implantation; threshold voltage sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740115
