Title :
Low-voltage punchthrough injection structure
Author :
Delagebeaudeuf, D.
Author_Institution :
Thomson-CSF, LCR, Orsay, France
Abstract :
Some new results for low-voltage low-current BARITT oscillators are presented. It is shown that an X band oscillator operating with an applied power as low as 0.1 W and an efficiency near 1% is quite feasible.
Keywords :
avalanche diodes; microwave oscillators; solid-state microwave circuits; transit time devices; BARITT oscillators; X-band; avalanche diodes; low voltage punch through injection structure; microwave oscillators; solid state microwave circuits; transit time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740126
