Title :
Analytical small-signal model of the supercritical n+-n-n+ GaAs transferred-electron amplifier
Author_Institution :
Microwave Institute Foundation, Stockholm, Sweden
Abstract :
An analytical small-signal model for the supercritical n+-n-n+ GaAs transferred-electron amplifier has been developed. The model is used to examine the influence of diffusion, bias voltage and ambient temperature and to demonstrate that the n+-n-n+ device is more sensitive to changes in the ambient temperature than is the notch device.
Keywords :
microwave amplifiers; semiconductor device models; solid-state microwave circuits; transferred electron devices; GaAs; microwave amplifier; semiconductor device model; transferred electron devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740143
