DocumentCode
964884
Title
Analytical small-signal model of the supercritical n+-n-n+ GaAs transferred-electron amplifier
Author
K¿¿llb¿?ck, B.
Author_Institution
Microwave Institute Foundation, Stockholm, Sweden
Volume
10
Issue
10
fYear
1974
Firstpage
187
Lastpage
188
Abstract
An analytical small-signal model for the supercritical n+-n-n+ GaAs transferred-electron amplifier has been developed. The model is used to examine the influence of diffusion, bias voltage and ambient temperature and to demonstrate that the n+-n-n+ device is more sensitive to changes in the ambient temperature than is the notch device.
Keywords
microwave amplifiers; semiconductor device models; solid-state microwave circuits; transferred electron devices; GaAs; microwave amplifier; semiconductor device model; transferred electron devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19740143
Filename
4245102
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