DocumentCode :
965032
Title :
Structured Copper: A Pliable High Conductance Material for Bonding to Silicon Power Devices
Author :
Glascock, Homer H., II ; Webster, Harold F.
Author_Institution :
General Electric Company, Schenectady, NY, USA
Volume :
6
Issue :
4
fYear :
1983
fDate :
12/1/1983 12:00:00 AM
Firstpage :
460
Lastpage :
466
Abstract :
The large difference in thermal expansion between silicon and the high conductivity metals is a major problem to be solved in the packaging of high power silicon devices. One solution is by the use of structured copper which is made of many separate copper wires and can he directly attached to silicon without introducing large stresses. Methods of preparing structured copper are presented along with some examples of its application.
Keywords :
Copper; Power semiconductor devices; Semiconductor device bonding; Silicon materials/devices; Bonding forces; Conducting materials; Copper; Packaging; Silicon; Temperature dependence; Thermal conductivity; Thermal expansion; Thermal resistance; Thermal stresses;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/TCHMT.1983.1136213
Filename :
1136213
Link To Document :
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