Title :
Overlength modes of InP transferred-electron devices
Author :
Jones, D. ; Rees, H.D.
Author_Institution :
Royal Radar Establishment, Great Malvern, UK
Abstract :
Simulations of overlength modes in InP transferred-electron devices indicate microwave conversion efficiencies greater than 25%. The maximum frequency of operation exceeds 20 GHz. but depends markedly on the nature of the electronic intervalley scattering processes and associated relaxation effects.
Keywords :
microwave oscillators; semiconductor device models; simulation; solid-state microwave devices; transferred electron devices; InP transferred electron devices; electronic intervalley scattering processes; maximum frequency; microwave conversion efficiencies; microwave oscillators; overlength modes; relaxation effects; semiconductor device models; simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740181
