• DocumentCode
    965464
  • Title

    Effects of degradation-induced absorption in GaAs-d.h.s. laser diodes

  • Author

    Schicketanz, D. ; Wittmann, J. ; Zeidler, G.

  • Author_Institution
    Siemens AG, Forschungslaboratorien, Mÿnchen, West Germany
  • Volume
    10
  • Issue
    13
  • fYear
    1974
  • Firstpage
    252
  • Lastpage
    253
  • Abstract
    The absorbing lines observed in degraded GaAs-d.h.s. laser diodes cause increased local heating and higher threshold values. Since absorption is partly saturable by strong optical signals, the transient behaviour resembles that of passive Q-switched lasers.
  • Keywords
    semiconductor lasers; GaAs double heterostructure laser diodes; degradation induced absorption; local heating; threshold values; transient behaviour;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740199
  • Filename
    4245161
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=965464