DocumentCode :
9655
Title :
Electrical and Reliability Characteristics of High- 
-InGaZnO Thin-Film Transistors
Author :
Tung-Ming Pan ; Ching-Hung Chen ; Jiang-Hung Liu ; Jim-Long Her ; Koyama, Koichi
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Volume :
35
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
66
Lastpage :
68
Abstract :
In this letter, we investigated the electrical and reliability characteristics of high- κ HoTiO3 amorphous indium-gallium-zinc oxide ( α-IGZO) thin-film transistor (TFT) devices. The α-IGZO TFT device incorporating an HoTiO3 dielectric exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.12 V, a high field-effect mobility of 21.4 cm2/Vs, a small subthreshold swing of 160 mV/decade, and a high ION/IOFF current ratio of 1.3 ×108. These results are attributed to the incorporation of TiOx into the Ho2O3 film forming the smooth surface roughness and thus reducing the oxygen vacancies. Furthermore, the threshold voltage stability of HoTiO3 α-IGZO TFT was studied under both positive and negative bias stress conditions.
Keywords :
II-VI semiconductors; amorphous semiconductors; gallium compounds; high-k dielectric thin films; holmium compounds; indium compounds; semiconductor device reliability; surface roughness; thin film transistors; vacancies (crystal); wide band gap semiconductors; zinc compounds; α-IGZO TFT device; HoTiO3-InGaZnO; amorphous indium-gallium-zinc oxide TFT devices; electrical characteristics; field-effect mobility; high-κ thin-film transistors; negative bias stress conditions; oxygen vacancies; positive bias stress conditions; reliability characteristics; surface roughness; threshold voltage stability; Dielectrics; Hafnium compounds; Logic gates; Stress; Thin film transistors; Threshold voltage; ${rm HoTiO}_{3}$ $alpha$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2287349
Filename :
6678542
Link To Document :
