DocumentCode
965500
Title
Flux considerations in the coupling of Monte Carlo plasma sheath simulations with feature evolution models
Author
Dalvie, Manoj ; Farouki, Rida T. ; Hamaguchi, Satoshi
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
39
Issue
5
fYear
1992
fDate
5/1/1992 12:00:00 AM
Firstpage
1090
Lastpage
1099
Abstract
The evolution of two features, a 2-d trench and a circular via exposed to a 3-v ion flux is calculated. The surface flux is calculated using the particle distribution function, obtained from a Monte Carlo sheath simulation. While Monte Carlo sheath simulations are 1-d/2-v (axisymmetric), shadowing on a substrate surface due to topography breaks the axisymmetry and necessitates a 2-d/3-v surface flux calculation. The authors show a methodology for the flux calculation in long trenches and circular vias which adds very little to computational expense over that incurred for a 2-d/2-v flux calculation. Comparison between the trench and the via shows that, as expected, the geometry of a via blocks out more ion trajectories than that of a trench leading to a smaller etch rate in a via. If the flux is calculated in 2-d/2-v phase space, the resulting feature shape is shown to be an artifact of the calculation method. It is also shown that the angular distribution of the particle as well as energy fluxes and the resulting shape of the feature are largely insensitive to the electric field profile assumed for a given sheath voltage
Keywords
Monte Carlo methods; sputter etching; 2-d trench; Monte Carlo plasma sheath simulations; circular via; electric field profile; feature evolution models; flux calculation; ion trajectories; plasma etching; sheath voltage; Computational modeling; Distribution functions; Etching; Geometry; Monte Carlo methods; Plasma sheaths; Shadow mapping; Shape; Surface topography; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.129088
Filename
129088
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