• DocumentCode
    965500
  • Title

    Flux considerations in the coupling of Monte Carlo plasma sheath simulations with feature evolution models

  • Author

    Dalvie, Manoj ; Farouki, Rida T. ; Hamaguchi, Satoshi

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    39
  • Issue
    5
  • fYear
    1992
  • fDate
    5/1/1992 12:00:00 AM
  • Firstpage
    1090
  • Lastpage
    1099
  • Abstract
    The evolution of two features, a 2-d trench and a circular via exposed to a 3-v ion flux is calculated. The surface flux is calculated using the particle distribution function, obtained from a Monte Carlo sheath simulation. While Monte Carlo sheath simulations are 1-d/2-v (axisymmetric), shadowing on a substrate surface due to topography breaks the axisymmetry and necessitates a 2-d/3-v surface flux calculation. The authors show a methodology for the flux calculation in long trenches and circular vias which adds very little to computational expense over that incurred for a 2-d/2-v flux calculation. Comparison between the trench and the via shows that, as expected, the geometry of a via blocks out more ion trajectories than that of a trench leading to a smaller etch rate in a via. If the flux is calculated in 2-d/2-v phase space, the resulting feature shape is shown to be an artifact of the calculation method. It is also shown that the angular distribution of the particle as well as energy fluxes and the resulting shape of the feature are largely insensitive to the electric field profile assumed for a given sheath voltage
  • Keywords
    Monte Carlo methods; sputter etching; 2-d trench; Monte Carlo plasma sheath simulations; circular via; electric field profile; feature evolution models; flux calculation; ion trajectories; plasma etching; sheath voltage; Computational modeling; Distribution functions; Etching; Geometry; Monte Carlo methods; Plasma sheaths; Shadow mapping; Shape; Surface topography; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.129088
  • Filename
    129088