Atomistic Approach to Thickness-Dependent Bandstructure Calculation of InSb UTB

Author

Guan, Ximeng ; Yu, Zhiping

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing

Volume

6

Issue

1

fYear

2007

Firstpage

101

Lastpage

105

Abstract

InSb is known to have the highest electron mobility among all III-V binary compounds, and is thus considered as a candidate channel material for future nanoscale FET devices. In this paper, two-dimensional bandstructures of (100) oriented InSb ultrathin bodies are calculated using an atomistic approach based on the sp³d ⁵s^* tight-binding model. Key parameters, including energy bandgap, density of states, and carrier effective masses, are extracted from bandstructures obtained numerically. These parameters can further be used as inputs for channel mobility simulation

Keywords

III-V semiconductors; effective mass; electron mobility; electronic density of states; energy gap; indium compounds; tight-binding calculations; III-V binary compounds; InSb; UTB; carrier effective masses; channel mobility simulation; density of states; electron mobility; energy bandgap; nanoscale FET devices; thickness-dependent bandstructure calculation; tight-binding model; two-dimensional bandstructures; Atomic layer deposition; Effective mass; Electron mobility; FETs; HEMTs; III-V semiconductor materials; MODFETs; MOSFETs; Photonic band gap; Potential well; Bandstructure; carrier mobility; density of states (DOS); effective mass; indium antimonide (InSb); ultrathin body (UTB);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2006.886778

Filename

4063331