Title :
Atomistic Approach to Thickness-Dependent Bandstructure Calculation of InSb UTB
Author :
Guan, Ximeng ; Yu, Zhiping
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
Abstract :
InSb is known to have the highest electron mobility among all III-V binary compounds, and is thus considered as a candidate channel material for future nanoscale FET devices. In this paper, two-dimensional bandstructures of (100) oriented InSb ultrathin bodies are calculated using an atomistic approach based on the sp3d 5s* tight-binding model. Key parameters, including energy bandgap, density of states, and carrier effective masses, are extracted from bandstructures obtained numerically. These parameters can further be used as inputs for channel mobility simulation
Keywords :
III-V semiconductors; effective mass; electron mobility; electronic density of states; energy gap; indium compounds; tight-binding calculations; III-V binary compounds; InSb; UTB; carrier effective masses; channel mobility simulation; density of states; electron mobility; energy bandgap; nanoscale FET devices; thickness-dependent bandstructure calculation; tight-binding model; two-dimensional bandstructures; Atomic layer deposition; Effective mass; Electron mobility; FETs; HEMTs; III-V semiconductor materials; MODFETs; MOSFETs; Photonic band gap; Potential well; Bandstructure; carrier mobility; density of states (DOS); effective mass; indium antimonide (InSb); ultrathin body (UTB);
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2006.886778
