DocumentCode
965690
Title
Nano Temperature Sensor Using Selective Lateral Growth of Carbon Nanotube Between Electrodes
Author
Kuo, Cheng Yung ; Chan, Chia Lang ; Gau, Chie ; Liu, Chien-Wei ; Shiau, Shiuan Hua ; Ting, Jyh-Hua
Author_Institution
Nat. Cheng Kung Univ., Tainan
Volume
6
Issue
1
fYear
2007
Firstpage
63
Lastpage
69
Abstract
This paper presents lateral growth of carbon nanotube (CNT) between two electrodes and its use as nano temperature sensor. Fabrication of electrodes is made by MEMS techniques. The CNT is grown selectively by microwave plasma chemical vapor deposition between two electrodes. After wire bonding, the grown CNT is tested and calibrated. The growth conditions of CNT, such as the flow rate of CH4 or N2 gas, are varied to obtain a high-quality CNT sensor. SEM is used to observe the shape and structure of CNT, while Raman spectrum analysis is used to indicate the degree of graphitization or amorphous structure in the CNT. The I-V curve of CNT is measured at different temperature, and a linear relationship between the electric resistance of CNT and the temperature is obtained. This result indicates that CNT can be used as a temperature sensor
Keywords
Raman spectra; amorphous semiconductors; carbon nanotubes; electric resistance; electrodes; elemental semiconductors; graphitisation; nanotechnology; plasma CVD; scanning electron microscopy; semiconductor growth; temperature sensors; C; CH4 gas; I-V curve; MEMS techniques; N2 gas; Raman spectrum analysis; SEM; amorphous structure; carbon nanotube sensor; electric resistance; electrodes; flow rate; graphitization; microwave plasma chemical vapor deposition; nano temperature sensor; selective lateral growth; semiconductor devices; wire bonding; Carbon nanotubes; Chemical vapor deposition; Electrodes; Fabrication; Micromechanical devices; Plasma chemistry; Plasma temperature; Temperature measurement; Temperature sensors; Wire; Carbon nanotube; molecular electronics; nanosensor; nanotechnology; selective lateral growth; semiconductor devices; temperature sensor;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2006.888531
Filename
4063333
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