Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon

Author

Moselund, Kirsten E. ; Bouvet, Didier ; Tschuor, Lucas ; Pott, Vincent ; Dainesi, Paolo ; Eggimann, Christoph ; Le Thomas, Nicolas ; Houdré, Romuald ; Ionescu, Adrian M.

Author_Institution

Electron. Lab., Ecole Polytech. Fed. de Lausanne

Volume

6

Issue

1

fYear

2007

Firstpage

118

Lastpage

125

Abstract

In this work we present a bulk silicon technology platform able to cointegrate gate-all-around (GAA) MOSFETs and local SOI waveguides with pentagonal cross section. Wire diagonals of 100-800 nm are obtained using a lithographic resolution of 0.8 mum. Well-functioning triangular multigate MOSFETs are reported, and tested up to 150 degC. A significant increase is observed in the low-field mobility mu₀ for small devices (W_effles500 nm), which is attributed to local volume inversion in the corners. Preliminary characterization of the optical waveguides is carried out, showing optical losses of a few dB/cm. The processing is entirely CMOS compatible, does not require access to advanced lithography equipment, and is based on a silicon bulk substrate. Thus, this technology might serve as the basis for a low-cost, high-performance optical signaling platform

Keywords

MOSFET; integrated optics; lithography; optical losses; optical waveguides; silicon-on-insulator; 100 to 800 nm; GAA MOSFET; SOI waveguides; Si; cointegrate gate-all-around MOSFETs; lithographic resolution; optical losses; silicon technology; silicon-on-insulator optical waveguides; High speed optical techniques; MOSFETs; Optical losses; Optical modulation; Optical refraction; Optical scattering; Optical sensors; Optical variables control; Optical waveguides; Silicon on insulator technology; Multiple gate MOSFET; optical signaling; optical waveguides;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2006.886748

Filename

4063338