Title :
Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon
Author :
Moselund, Kirsten E. ; Bouvet, Didier ; Tschuor, Lucas ; Pott, Vincent ; Dainesi, Paolo ; Eggimann, Christoph ; Le Thomas, Nicolas ; Houdré, Romuald ; Ionescu, Adrian M.
Author_Institution :
Electron. Lab., Ecole Polytech. Fed. de Lausanne
Abstract :
In this work we present a bulk silicon technology platform able to cointegrate gate-all-around (GAA) MOSFETs and local SOI waveguides with pentagonal cross section. Wire diagonals of 100-800 nm are obtained using a lithographic resolution of 0.8 mum. Well-functioning triangular multigate MOSFETs are reported, and tested up to 150 degC. A significant increase is observed in the low-field mobility mu0 for small devices (Weffles500 nm), which is attributed to local volume inversion in the corners. Preliminary characterization of the optical waveguides is carried out, showing optical losses of a few dB/cm. The processing is entirely CMOS compatible, does not require access to advanced lithography equipment, and is based on a silicon bulk substrate. Thus, this technology might serve as the basis for a low-cost, high-performance optical signaling platform
Keywords :
MOSFET; integrated optics; lithography; optical losses; optical waveguides; silicon-on-insulator; 100 to 800 nm; GAA MOSFET; SOI waveguides; Si; cointegrate gate-all-around MOSFETs; lithographic resolution; optical losses; silicon technology; silicon-on-insulator optical waveguides; High speed optical techniques; MOSFETs; Optical losses; Optical modulation; Optical refraction; Optical scattering; Optical sensors; Optical variables control; Optical waveguides; Silicon on insulator technology; Multiple gate MOSFET; optical signaling; optical waveguides;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2006.886748
