Analysis of the enhanced hot-electron injection in split-gate transistors useful for EEPROM applications

Author

Van Houdt, Jan ; Heremans, Paul ; Deferm, Ludo ; Groeseneken, Guido ; Maes, Herman E.

Author_Institution

Interuniv. Micro-Electron. Centre, Leuven, Belgium

Volume

39

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1150

Lastpage

1156

Abstract

When applying a high voltage to the floating gate of a split-gate transistor, enhanced hot-electron injection is observed that can be used for 5-V compatible EPROM or flash EEPROM device operation. The current collected on the gate is equal to the total electron injection current. Charge-pumping measurements and device simulations are used to analyze the electron injection and to determine its exact position in the transistor channel. Gate currents only show a weak dependence on both transistor channel lengths. The width of the spacer between both transistor gate has, however, been determined to be an important injection parameter

Keywords

EPROM; MOS integrated circuits; integrated memory circuits; semiconductor device models; 5-V compatible EPROM; EEPROM applications; charge pumping measurements; device simulations; enhanced hot-electron injection; flash EEPROM device operation; floating gate; gate currents; split-gate transistors; total electron injection current; Analytical models; CMOS process; Charge pumps; Current measurement; EPROM; Helium; Position measurement; Secondary generated hot electron injection; Split gate flash memory cells; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.129096

Filename

129096