Title :
Indium-phosphide c.w. transferred-electron amplifiers
Author :
Corlett, R.M. ; Griffith, I. ; Purcell, J.J.
Author_Institution :
Plessey Co., Allen Clark Research Centre, Towcester, UK
Abstract :
J band c.w. low-noise indium-phosphide reflection amplifiers are described. An integral-heatsink technology has resulted in devices that can be operated c.w. at high bias levels. C.W. noise figures as low as 10.7 dB have been obtained at 14 GHz, and voltage-gain-bandwidth products of 3.1 GHz have been obtained. Measurements of impedance, noise and the temperature sensitivity of the gain are presented.
Keywords :
microwave amplifiers; solid-state microwave devices; transferred electron devices; 14 GHz; InP; J-band; gain; impedance; integral heatsink technology; microwave amplifiers; noise; solid state microwave devices; temperature sensitivity; transferred electron devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740243
