• DocumentCode
    965880
  • Title

    Transient analysis of stored charge in neutral base region

  • Author

    Suzuki, Kunihiro ; Satoh, Shigeo ; Nakayama, Noriaki

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    39
  • Issue
    5
  • fYear
    1992
  • fDate
    5/1/1992 12:00:00 AM
  • Firstpage
    1164
  • Lastpage
    1169
  • Abstract
    The authors studied the transient relationship between stored charge in the neutral base region and electron current flowing through emitter and collector terminals. Stored charge flows not only through an emitter terminal but also through a collector terminal when emitter-base junction voltage decreases from the switch-on voltage to zero. The ratio of net charge flowing through the emitter terminal to that flowing through the collector terminal is 2:1 once a steady state has been reached. No charge accumulates through the collector terminal when the emitter-base junction voltage increases from zero to the switch-on voltage, however, so the charge partition ratio depends on the sign of the time gradient of the emitter-base voltage
  • Keywords
    bipolar transistors; semiconductor device models; bipolar transistor models; charge partition ratio; collector terminal; electron current; emitter terminal; emitter-base junction voltage; neutral base region; stored charge; switch-on voltage; Bipolar transistor circuits; Boundary conditions; Capacitance; Circuit simulation; Electron emission; Helium; Predictive models; Steady-state; Transient analysis; Zero voltage switching;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.129098
  • Filename
    129098