DocumentCode
965880
Title
Transient analysis of stored charge in neutral base region
Author
Suzuki, Kunihiro ; Satoh, Shigeo ; Nakayama, Noriaki
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
39
Issue
5
fYear
1992
fDate
5/1/1992 12:00:00 AM
Firstpage
1164
Lastpage
1169
Abstract
The authors studied the transient relationship between stored charge in the neutral base region and electron current flowing through emitter and collector terminals. Stored charge flows not only through an emitter terminal but also through a collector terminal when emitter-base junction voltage decreases from the switch-on voltage to zero. The ratio of net charge flowing through the emitter terminal to that flowing through the collector terminal is 2:1 once a steady state has been reached. No charge accumulates through the collector terminal when the emitter-base junction voltage increases from zero to the switch-on voltage, however, so the charge partition ratio depends on the sign of the time gradient of the emitter-base voltage
Keywords
bipolar transistors; semiconductor device models; bipolar transistor models; charge partition ratio; collector terminal; electron current; emitter terminal; emitter-base junction voltage; neutral base region; stored charge; switch-on voltage; Bipolar transistor circuits; Boundary conditions; Capacitance; Circuit simulation; Electron emission; Helium; Predictive models; Steady-state; Transient analysis; Zero voltage switching;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.129098
Filename
129098
Link To Document