DocumentCode :
965880
Title :
Transient analysis of stored charge in neutral base region
Author :
Suzuki, Kunihiro ; Satoh, Shigeo ; Nakayama, Noriaki
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Volume :
39
Issue :
5
fYear :
1992
fDate :
5/1/1992 12:00:00 AM
Firstpage :
1164
Lastpage :
1169
Abstract :
The authors studied the transient relationship between stored charge in the neutral base region and electron current flowing through emitter and collector terminals. Stored charge flows not only through an emitter terminal but also through a collector terminal when emitter-base junction voltage decreases from the switch-on voltage to zero. The ratio of net charge flowing through the emitter terminal to that flowing through the collector terminal is 2:1 once a steady state has been reached. No charge accumulates through the collector terminal when the emitter-base junction voltage increases from zero to the switch-on voltage, however, so the charge partition ratio depends on the sign of the time gradient of the emitter-base voltage
Keywords :
bipolar transistors; semiconductor device models; bipolar transistor models; charge partition ratio; collector terminal; electron current; emitter terminal; emitter-base junction voltage; neutral base region; stored charge; switch-on voltage; Bipolar transistor circuits; Boundary conditions; Capacitance; Circuit simulation; Electron emission; Helium; Predictive models; Steady-state; Transient analysis; Zero voltage switching;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.129098
Filename :
129098
Link To Document :
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