Numerical analysis of alpha-particle-induced soft errors in SOI MOS devices

Author

Iwata, Hideyuki ; Ohzone, Takashi

Author_Institution

Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan

Volume

39

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1184

Lastpage

1190

Abstract

Alpha-particle-induced soft errors in SOI MOSFETs are examined using a three-dimensional device simulation. A bipolar mechanism induced by the alpha-particle incidence is investigated in detail when an alpha particle penetrates from the drain region toward the source region. In SOI MOSFETs, the drain collected and source injected charges are mainly due to a bipolar mechanism. The bipolar mechanism in SOI MOSFETs is quite different from that which has been so far reported in bulk MOSFETs, and operates with a very small current of less than 1 nA for a very long time of 1 ns to 100 ms. The drain collected and source injected charges are strongly dependent on various device parameters and lifetimes. The results suggest that the bipolar mechanism is a significant cause of soft errors in SOI MOSFETs

Keywords

alpha-particle effects; alpha-particles; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; 1 nA; 1 ns to 100 ms; SOI MOS devices; SOI MOSFETs; alpha-particle incidence; alpha-particle-induced soft errors; bipolar mechanism; drain collected charges; numerical analysis; source injected charges; three-dimensional device simulation; Alpha particles; Charge carrier processes; Error analysis; MOS devices; Numerical analysis; Numerical simulation; Poisson equations; Predictive models; Silicon on insulator technology; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.129101

Filename

129101