Microstructures for control of multiple ion or electron beams

Structures have been fabricated with the potential to provide multiple particle beam control for high-speed direct-write lithography with the potential of gigahertz date rates and 0.1- mu m pixel sizes. The principal device structure consists of an array of apertures capable of supporting individual deflectors that is built into monolithic single-crystal silicon substrate. The construction of versions of these structures with very small 0.08- mu m apertures and with aperture/Einsel lens combinations has been demonstrated. Far-submicrometer (<0.10 mu m) resist structures have been printed using wand apertures fabricated by oxidizing silicon orifices. The performance of such a prototype lithography system using wand lens arrays has been projected to have a 3.84-GHz effective data rate and under 1-min writing times of high-density patterns on 100-mm wafers. Key aspects of fabrication of the microstructure are described.