• DocumentCode
    965978
  • Title

    Technology of superconducting thin films on Si, SiO2, and Si3N4 for vacuum microelectronics

  • Author

    Aslam, Mohammad ; Soltis, Richard E. ; Logothetis, E.M. ; Chase, Richard E. ; Wenger, Lowell E. ; Chen, J.T.

  • Author_Institution
    Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
  • Volume
    36
  • Issue
    11
  • fYear
    1989
  • fDate
    11/1/1989 12:00:00 AM
  • Firstpage
    2693
  • Lastpage
    2696
  • Abstract
    A study of YBaCuO films on Si, SiO2, and Si3N4 substrates demonstrates that rapid thermal processing can suppress the film-substrate reaction during the postgrowth oxygen annealing. By increasing the copper content of YBaCuO films that are sputter-deposited on SiO2/Si to correspond to the 1:2:3 metal composition, the authors have achieved an onset of superconductivity above 95 K and a Tc(0) above 70 K through a rapid oxygen anneal for 6 s at 940 degrees C without a nitrogen preanneal. These results as well as results of others suggest that high Tc oxide superconductors could be used as electron sources or as cold emitters, gates, and collectors.
  • Keywords
    annealing; barium compounds; electron field emission; electron sources; high-temperature superconductors; sputtered coatings; superconducting thin films; vacuum tubes; yttrium compounds; 70 to 95 K; 940 degC; Si; Si3N4; SiO2; YBaCuO-Si; YBaCuO-Si3N4-Si; YBaCuO-SiO2-Si; cold emitters; collectors; electron sources; field emission; gates; high Tc oxide superconductors; high temperature superconductors; integrated vacuum tubes; postgrowth O2 annealing; rapid thermal processing; sputter-deposited; superconducting thin films; vacuum microelectronics; Buffer layers; Electron sources; High temperature superconductors; Microelectronics; Nitrogen; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Superconducting films; Superconducting materials; Superconducting thin films; Superconductivity; Vacuum technology; Yttrium barium copper oxide;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.43774
  • Filename
    43774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=965978