• DocumentCode
    966003
  • Title

    Far-field emission patterns of single heterostructure GaAs lasers

  • Author

    Henshall, G.D. ; Whiteaway, J.E.A.

  • Author_Institution
    Standard Telecommunication Laboratories Ltd., Harlow, UK
  • Volume
    10
  • Issue
    15
  • fYear
    1974
  • Firstpage
    326
  • Lastpage
    327
  • Abstract
    The emission patterns of single heterostructure lasers have been calculated as a function of the refractive-index Step between the p GaAs active region and the n GaAs substrate. The conclusions that higher n doping levels should produce better optical confinement and a wider far-field pattern are supported by experimental measurements, from which the refractive index can be deduced.
  • Keywords
    refractive index; semiconductor lasers; far field emission patterns; refractive index; semiconductor lasers; single heterostructure GaAs lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740257
  • Filename
    4245221
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966003