Ohmic contact formation on GaAs layers with low-temperature molecular-beam epitaxial caps

Author

Look, D.C. ; Yamamoto, H. ; Nakano, K.

Author_Institution

Univ. Res. Center, Wright State Univ., Dayton, OH, USA

Volume

39

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1237

Lastpage

1239

Abstract

Molecular-beam epitaxial GaAs layers, grown at 200 or 400°C, show great promise as passivating or insulating films on top of standard n-type MESFET layers (n≃1.6×10¹⁷ cm^-3) grown at normal temperatures (580-600°C). It is shown that ohmic contacts, with specific contact resistances of 10^-6 Ω-cm², can easily be fabricated without removing the cap layers. Preliminary results on capped p-type MESFET layers (p=1.5×10¹⁷ cm^-3) suggest that a 200°C cap may degrade the contact resistance by a factor of 3-10

Keywords

III-V semiconductors; contact resistance; gallium arsenide; molecular beam epitaxial growth; ohmic contacts; passivation; semiconductor epitaxial layers; 200 to 600 C; GaAs layers; MBE; MESFET layers; insulating films; low-temperature molecular-beam epitaxial caps; ohmic contact formation; ohmic contacts; passivating films; semiconductors; specific contact resistances; Gallium arsenide; Grain boundaries; Heating; Implants; Molecular beam epitaxial growth; Ohmic contacts; Resistors; Semiconductor films; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.129112

Filename

129112