DocumentCode
966082
Title
Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement
Author
Waldrop, J.R. ; Wang, K.C. ; Asbeck, P.M.
Author_Institution
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Volume
39
Issue
5
fYear
1992
fDate
5/1/1992 12:00:00 AM
Firstpage
1248
Lastpage
1250
Abstract
A method of measuring the junction temperature and associated thermal resistance of heterojunction bipolar transistors by using the temperature dependence of the DC gain is described
Keywords
III-V semiconductors; aluminium compounds; gain measurement; gallium arsenide; heterojunction bipolar transistors; temperature measurement; AlGaAs-GaAs; DC gain temperature dependence; HBT; electrical measurement; heterojunction bipolar transistors; junction temperature measurement; semiconductors; thermal resistance; Electrical resistance measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; MOSFET circuits; Predictive models; SPICE; Temperature dependence; Temperature measurement; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.129117
Filename
129117
Link To Document