Title :
Effects of shielded-gate structure on on-resistance of the SIT with a high-purity channel region
Author :
Yano, Koji ; Kim, Chang-Woo ; Kimura, Masakazu ; Tanaka, Akira ; Motoyama, Shin-Ichi ; Sukegawa, Tokuzo
Author_Institution :
Shizuoka Univ., Hamamatsu, Japan
fDate :
5/1/1992 12:00:00 AM
Abstract :
A shielded-gate structure, is proposed to improve the on-resistance of the static induction transistor (SIT) with a high-purity channel. The results of two-dimensional simulation reveal that the introduction of this structure can reduce the on-resistance of the high-purity channel SIT as well as support sufficient depletion in the channel at a small reverse gate voltage to ensure the static induction operation
Keywords :
field effect transistors; semiconductor device models; 2D simulation; SIT; channel depletion; high-purity channel region; on-resistance; operation; shielded-gate structure; small reverse gate voltage; static induction operation; static induction transistor; two-dimensional simulation; Boron; CMOS logic circuits; Contact resistance; Doping profiles; Electrical resistance measurement; Electron devices; Power electronics; Q measurement; Silicon; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
