Electrical Characteristics of Large-Scale Integration Silicon MOSFET´s at Very High Temperatures,Part III: Modeling and Circuit Behavior

The effects of high temperature (27°C to 300°C) on electrical characteristics of long n and p channel metal-oxide semiconductor fieldeffect transistors (MOSFET´s) are used to extend the validity of the conventional (room temperature) large and small signal models of these devices. A complementary metal-oxide semiconductor (CMOS) inverter´s transfer characteristics and switching speed performance, and the frequency response of a simple resistive load inverter are presented, with temperature as a parameter. Some implications of the models developed, on analog MOS circuit design (for high-temperature, operation), are discussed.