• DocumentCode
    966253
  • Title

    Measurement of the effect of injected carriers on the p-n refractive-index step in single heterostructure diode lasers

  • Author

    Selway, P.R. ; Thompson, G.H.B. ; Henshall, G.D. ; Whiteaway, J.E.A.

  • Author_Institution
    Standard Telecommunication Laboratories Ltd., Harlow, UK
  • Volume
    10
  • Issue
    22
  • fYear
    1974
  • Firstpage
    453
  • Lastpage
    455
  • Abstract
    Far-field emission patterns of GaAs/GaxAl1-x As single heterostructure lasers have been measured over a range of temperature and threshold currents. The pattern width decreases as the threshold increases, which can be interpreted as a reduction of the p-n refractive-index step, owing to the effect of the injected carriers. A quantitative estimate of this effect has been obtained.
  • Keywords
    p-n heterojunctions; refractive index; semiconductor lasers; measurement of the effect of injected carriers; p-n refractive index step; single heterostructure diode lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740360
  • Filename
    4245247
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966253