• DocumentCode
    966324
  • Title

    Deeply Etched SiO2 Ridge Waveguide for Sharp Bends

  • Author

    Dai, Daoxin ; Shi, Yaocheng

  • Author_Institution
    Centre for Opt. & Electromagn. Res., Zhejiang Univ., Hangzhou
  • Volume
    24
  • Issue
    12
  • fYear
    2006
  • Firstpage
    5019
  • Lastpage
    5024
  • Abstract
    A deeply etched SiO2 ridge waveguide including the buffer, core, and cladding is presented for realizing sharp bends. The present SiO2 ridge waveguide has a strong confinement at the lateral direction, while it has a weak confinement at the vertical direction. Due to the strong confinement, a sharp bend (with a very small bending radius of about 10 mum) is obtained for an acceptable bending loss. A detailed analysis of the loss in a bent waveguide is given by using a finite-difference method. In order to reduce the transition loss, a narrow bending section with an optimal lateral offset is used. A low leakage loss is obtained by using wide straight waveguides, and linear tapers are used to connect the wide straight section and narrow bent sections
  • Keywords
    etching; finite difference methods; optical losses; optical waveguide theory; ridge waveguides; silicon compounds; waveguide discontinuities; SiO2; SiO2 ridge waveguide; bending loss; deep etching; finite-difference method; leakage loss; linear tapers; waveguide bends; Electromagnetic waveguides; Etching; Indium phosphide; Optical buffering; Optical fiber losses; Optical refraction; Optical scattering; Optical surface waves; Optical variables control; Optical waveguides; Bending; deep etching; ridge waveguide; silicon oxide;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.2006.885243
  • Filename
    4063394