DocumentCode
966324
Title
Deeply Etched SiO2 Ridge Waveguide for Sharp Bends
Author
Dai, Daoxin ; Shi, Yaocheng
Author_Institution
Centre for Opt. & Electromagn. Res., Zhejiang Univ., Hangzhou
Volume
24
Issue
12
fYear
2006
Firstpage
5019
Lastpage
5024
Abstract
A deeply etched SiO2 ridge waveguide including the buffer, core, and cladding is presented for realizing sharp bends. The present SiO2 ridge waveguide has a strong confinement at the lateral direction, while it has a weak confinement at the vertical direction. Due to the strong confinement, a sharp bend (with a very small bending radius of about 10 mum) is obtained for an acceptable bending loss. A detailed analysis of the loss in a bent waveguide is given by using a finite-difference method. In order to reduce the transition loss, a narrow bending section with an optimal lateral offset is used. A low leakage loss is obtained by using wide straight waveguides, and linear tapers are used to connect the wide straight section and narrow bent sections
Keywords
etching; finite difference methods; optical losses; optical waveguide theory; ridge waveguides; silicon compounds; waveguide discontinuities; SiO2; SiO2 ridge waveguide; bending loss; deep etching; finite-difference method; leakage loss; linear tapers; waveguide bends; Electromagnetic waveguides; Etching; Indium phosphide; Optical buffering; Optical fiber losses; Optical refraction; Optical scattering; Optical surface waves; Optical variables control; Optical waveguides; Bending; deep etching; ridge waveguide; silicon oxide;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.2006.885243
Filename
4063394
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