• DocumentCode
    966724
  • Title

    Leakage Currents in Multilayer Ceramic Capacitors

  • Author

    Lee, Hee Young ; Lee, Kyo-Chol ; Schunke, J. Neil ; Burton, Larry C.

  • Author_Institution
    Virginia Polytechnic Inst. And State Univ., Blacksburg, VA
  • Volume
    7
  • Issue
    4
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    443
  • Lastpage
    453
  • Abstract
    Leakage currents in new and degraded (typically at twice rated voltage, 125°C) ZSU and X7R types Of multilayer ceramic (MLC) capacitors show both ohmic and space charge limited current behavior. The near 3/2 power voltage characteristic (la V3/2) of new devices can be attributed to electron emission from electrode points. The quadratic behavior (I \\alpha V2) seen for moderately degraded devices represents space charge limited emission from near planar electrodes. This emission may evolve from the point emission due to resistivity decreases that occur in the emission region as a result of ion movement. For these currents, electrons are believed to be the dominant charge carriers. Neither Schottky or Poole-Frenkel currents were identified. Thermal activation energies decrease from ~1.3 eV for new X7R devices, to zero for degraded ones, corresponding to resistivity decreases from ~ 1013 \\Omega -cm to 105 \\Omega -cm or less (at 125°C). Carrier concentrations and mobilities have been estimated from thermoelectric measurements on new and reduced nonelectroded X7R chips, which exhibit n-type conduction. These parameters both increase substantially with reduction, with mobility dominating the thermal activation energy. These measurements are consistent with a small polaron hopping mode for electron transport in the ceramic.
  • Keywords
    Ceramic capacitors; Component reliability; Capacitors; Ceramics; Conductivity; Degradation; Electrodes; Electrons; Leakage current; Nonhomogeneous media; Space charge; Voltage;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/TCHMT.1984.1136375
  • Filename
    1136375