Active High Power Conversion Efficiency Rectifier With Built-In Dual-Mode Back Telemetry in Standard CMOS Technology

Author

Bawa, G. ; Ghovanloo, M.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC

Volume

2

Issue

3

fYear

2008

Firstpage

184

Lastpage

192

Abstract

In this paper, we present an active rectifier with high power conversion efficiency (PCE) implemented in a 0.5- mum 5 V standard CMOS technology with two modes of built-in back telemetry; short- and open-circuit. As a rectifier, it ensures a PCE > 80%, taking advantage of active synchronous rectification technique in the frequency range of 0.125-1 MHz. The built-in complementary back telemetry feature can be utilized in implantable microelectronic devices (IMD), wireless sensors, and radio frequency identification (RFID) applications to reduce the silicon area, increase the data rate, and improve the reading range and robustness in load shift keying (LSK).

Keywords

CMOS integrated circuits; biomedical electronics; biomedical telemetry; prosthetics; radiofrequency identification; radiotelemetry; rectifying circuits; CMOS technology; active rectifier; active synchronous rectification technique; built-in dual-mode back telemetry; frequency 0.125 MHz to 1 MHz; high-power conversion efficiency; implantable microelectronic devices; load shift keying; radio frequency identification; size 0.5 mum; voltage 5 V; wireless sensors; CMOS technology; Frequency; Microelectronics; Power conversion; Radiofrequency identification; Rectifiers; Robustness; Silicon; Telemetry; Wireless sensor networks; Back telemetry; CMOS; full-wave rectifier; implantable microelectronic devices; inductive link; radio frequency identification (RFID); wireless;

fLanguage

English

Journal_Title

Biomedical Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

1932-4545

Type

jour

DOI

10.1109/TBCAS.2008.924444

Filename

4660310