A flip-chip packaged coplanar 94 GHz amplifier module with efficient suppression of parasitic substrate effects

Author

Tessmann, A. ; Riessle, M. ; Kudszus, S. ; Massler, H.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

Volume

14

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

145

Lastpage

147

Abstract

A flip-chip mounted W-band amplifier module with more than 15 dB gain between 82 and 105 GHz has been developed, based on a 0.15 μm GaAs PHEMT technology. To predict the influence of the flip-chip transition, an equivalent circuit model of the flip-chip interconnects was developed. Lossy silicon (n-Si) flip-chip carriers were used to successfully minimize parasitic substrate modes and feed back effects. The flip-chip assembled coplanar 94 GHz amplifier MMIC was packaged in a WR-10 waveguide mount, using CPW-to-waveguide transitions realized on quartz substrates.

Keywords

HEMT integrated circuits; III-V semiconductors; MIMIC; coplanar waveguides; electronics packaging; equivalent circuits; flip-chip devices; gallium arsenide; millimetre wave amplifiers; 0.15 micron; 15 dB; 82 to 105 GHz; CPW-to-waveguide transitions; GaAs; MMIC; PHEMT; W-band; WR-10 waveguide mount; amplifier module; coplanar amplifier; coplanar waveguide; equivalent circuit model; flip-chip packaging; lossy substrates; parasitic substrate effects; quartz substrates; silicon carriers; Assembly; Equivalent circuits; Feeds; Gain; Gallium arsenide; Integrated circuit interconnections; PHEMTs; Packaging; Predictive models; Silicon;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2004.827115

Filename

1291445