Title :
Properties of 2 µm bubbles garnet films
Author :
Ferrand, B. ; Moriceau, H. ; Challeton, D. ; Daval, J.
Author_Institution :
IEEE TMAG
fDate :
9/1/1978 12:00:00 AM
Abstract :
2 μm bubbles Ga, Al or (Ca,Ge) substituted (EuLu)3Fe5O12and (YSmLuCa)3(FeGe)5O12garnet films were grown by liquid phase epitaxy on Gd3Ga5O12substrates. The compositions of the films were varied by modifying the composition of the growth solution. The magnetic properties of the films with 1 = 0,27 ± 0,03μm were discussed. The two compositions (EuLuCa)3(FeGe)5O12and (YSmLuCa)3(FeGe)5O12present a sufficient temperature stability from - 20 to + 80°C to be used in memory devices.
Keywords :
Crystal growth; Magnetic bubble films; Anisotropic magnetoresistance; Coercive force; Garnet films; Magnetic anisotropy; Magnetic domain walls; Magnetic films; Magnetic materials; Magnetostriction; Saturation magnetization; Temperature;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1978.1059893
