• DocumentCode
    966979
  • Title

    Properties of 2 µm bubbles garnet films

  • Author

    Ferrand, B. ; Moriceau, H. ; Challeton, D. ; Daval, J.

  • Author_Institution
    IEEE TMAG
  • Volume
    14
  • Issue
    5
  • fYear
    1978
  • fDate
    9/1/1978 12:00:00 AM
  • Firstpage
    415
  • Lastpage
    417
  • Abstract
    2 μm bubbles Ga, Al or (Ca,Ge) substituted (EuLu)3Fe5O12and (YSmLuCa)3(FeGe)5O12garnet films were grown by liquid phase epitaxy on Gd3Ga5O12substrates. The compositions of the films were varied by modifying the composition of the growth solution. The magnetic properties of the films with 1 = 0,27 ± 0,03μm were discussed. The two compositions (EuLuCa)3(FeGe)5O12and (YSmLuCa)3(FeGe)5O12present a sufficient temperature stability from - 20 to + 80°C to be used in memory devices.
  • Keywords
    Crystal growth; Magnetic bubble films; Anisotropic magnetoresistance; Coercive force; Garnet films; Magnetic anisotropy; Magnetic domain walls; Magnetic films; Magnetic materials; Magnetostriction; Saturation magnetization; Temperature;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1978.1059893
  • Filename
    1059893
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966979