DocumentCode
966981
Title
A 1-watt X-Ku band HBT MMIC amplifier with 50% peak power-added efficiency
Author
Ali, Fazal ; Salib, Mike ; Gupta, Aditya
Author_Institution
Westinghouse Electric Corp., Baltimore, MD, USA
Volume
3
Issue
8
fYear
1993
Firstpage
271
Lastpage
272
Abstract
A broadband, high-efficiency MMIC power amplifier has been developed using AlGaAs-GaAs heterojunction bipolar transistors (HBTs). At 7-V collector bias, the fully matched monolithic amplifier produced 31-dBm CW peak output power with 9.2-dB peak gain and 50% peak power-added efficiency in the 8-15-GHz band. Several amplifiers from five different wafers have ben successfully tested.<>
Keywords
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; wideband amplifiers; 1 W; 50 percent; 7 V; 8 to 15 GHz; 9.2 dB; AlGaAs-GaAs; HBT MMIC amplifier; SHF; broadband; fully matched monolithic amplifier; heterojunction bipolar transistors; high-efficiency; peak power-added efficiency; power amplifier; Band pass filters; Circuit optimization; Circuit synthesis; Circuit testing; Dielectric substrates; Heterojunction bipolar transistors; Impedance matching; MMICs; Power amplifiers; Power generation;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.242218
Filename
242218
Link To Document