Title :
A Low-Power Wideband CMOS LNA for WiMAX
Author :
Amer, Ahmed ; Hegazi, Emad ; Ragai, Hani
Author_Institution :
Dept. of Electron. & Commun. Eng., Ain Shams Univ., Cairo
Abstract :
In this brief, the design of a low-power inductorless wideband low-noise amplifier (LNA) for worldwide interoperability for microwave access covering the frequency range from 0.1 to 3.8 GHz using 0.13-mum CMOS is described. The core consumes 1.9 mW from a 1.2-V supply. The chip performance achieves S11 below -10 dB across the entire band and a minimum noise figure of 2.55 dB. The simulated third-order input intercept point is -2.7 dBm. The voltage gain reaches a peak of 11.2 dB in-band with an upper 3-dB frequency of 3.8 GHz, which can be extended to reach 6.2 GHz using shunt inductive peaking. A figure of merit is devised to compare the proposed designs to recently published wideband CMOS LNAs
Keywords :
CMOS integrated circuits; UHF amplifiers; WiMax; low noise amplifiers; low-power electronics; wideband amplifiers; 0.1 to 3.8 GHz; 0.13 micron; 1.2 V; 1.9 mW; 11.2 dB; 2.55 dB; WiMAX; inductorless wideband low-noise amplifier; low-power wideband CMOS LNA; microwave access; shunt inductive peaking; worldwide interoperability; CMOS technology; Character generation; Frequency; Low-noise amplifiers; Noise cancellation; Noise figure; Noise measurement; Shunt (electrical); WiMAX; Wideband; Figure of merit (FOM); inductive peaking; low-noise amplifier (LNA); noise figure (NF); wideband amplifiers;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2006.884113